Microchip MPF050TL handleiding
Handleiding
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DC Characteriscs
Data Sheet
© 2024 Microchip Technology Inc. and its subsidiaries
DS00003831E - 23
4.3.5 GPIO On-Die Terminaon
The following table lists the on-die termination calibration accuracy specications for the GPIO bank.
Table 4-24. On-Die Terminaon Calibraon Accuracy Specicaons for GPIO Bank
Parameter Description Min (%) Typ Max (%) Unit Condition
Dierential termination
1
Internal dierential termination –20 100 20 Ω V
ICM
< 0.8V
6
–20 100 40 Ω 0.6V < V
ICM
< 1.65V
6
–20 100 80 Ω 1.4V < V
ICM
6
Single-ended Thevenin
termination
2, 3
Internal parallel Thevenin
termination
–40 50 20 Ω V
DDI
= 1.8V/1.5V
–40 75 20 Ω V
DDI
= 1.8V
–40 150 20 Ω V
DDI
= 1.8V
–20 20 20 Ω V
DDI
= 1.5V
–20 30 20 Ω V
DDI
= 1.5V
–20 40 20 Ω V
DDI
= 1.5V
–20 60 20 Ω V
DDI
= 1.5V
–20 120 20 Ω V
DDI
= 1.5V
Single-ended termination to V
SS
4,
5
Internal parallel termination to
V
SS
–20 120 20 Ω V
DDI
= 2.5V/1.8V/1.5V/1.2V
–20 240 20 Ω V
DDI
= 2.5V/1.8V/1.5V/1.2V
1. Measured across P to N with 400 mV bias.
2. Thevenin impedance is calculated based on independent P and N as measured at 50% of V
DDI
.
3. For 50Ω/75Ω/150Ω cases, the nearest supported values of 40Ω/60Ω/120Ω are used.
4. Measured at 50% of V
DDI
.
5. Supported terminations vary with the I/O type regardless of V
DDI
nominal voltage. Refer to Libero
for available combinations and default settings.
6. When V
ICM
complies with more than one range, use the maximum percentage tolerance of the
two ranges.
4.3.6 I/O Hysteresis
The following table lists the I/O input hysteresis characteristics for HSIO and GPIO over
recommended operating conditions.
Table 4-25. Input Hysteresis Characteriscs over Recommended Operang Condions
Bank Type I/O Standard Hysteresis (min) Units
GPIO LVCMOS33 180 mV
GPIO LVCMOS25 135 mV
HSIO LVCMOS18 50 mV
HSIO LVCMOS15 50 mV
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Productinformatie
Merk | Microchip |
Model | MPF050TL |
Categorie | Niet gecategoriseerd |
Taal | Nederlands |
Grootte | 18409 MB |